?
Semiconductor Components Industries, LLC, 2013
May, 2013 ?
Rev. 9
1
Publication Order Number:
BAV99LT1/D
BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
Dual Series
Switching Diode
Features
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non?Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR?5 Board (Note 1) TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
?65 to
+150
°C
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping?
ORDERING INFORMATION
CASE 318
SOT?23
STYLE 11
MARKING DIAGRAM
3
CATHODE/ANODE
ANODE
1
CATHODE
2
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99LT3G SOT?23
(Pb?Free)
10,000 / Tape & Reel
BAV99LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
http://onsemi.com
1
A7 M
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
A7 = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
SBAV99LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
SBAV99LT3G SOT?23
(Pb?Free)
10,000 / Tape & Reel
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
BAV99RWT1G
DIODE SWITCH SS DUAL 70V SOT323
BAV99T116
DIODE SWITCH HI SPEED SOT-23 TR
BAV99TA
DIODE HI SPEED SW DUAL SOT23-3
BAV99W-7
DIODE DUAL SW 75V 200MW SC70-3
BAV99WT1G
DIODE SWITCH SS DUAL 70V SOT323
BAV99
DIODE ULTRAFAST HI CIND SOT-23
BAW101-7
DIODE ARRAY 300V 250MA SOT143
BAW101S,115
DIODE DUAL 300V 250MA SOT-363
相关代理商/技术参数
BAV99LT1G
制造商:ON Semiconductor 功能描述:DIODE DUAL SOT-23 制造商:ON Semiconductor 功能描述:DIODE, DUAL, SOT-23 制造商:ON Semiconductor 功能描述:DIODE, DUAL, SOT-23; Diode Type:Small Signal; Forward Current If(AV):215mA; Repetitive Reverse Voltage Vrrm Max:70V; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:6ns; Forward Surge Current Ifsm Max:500mA; Diode Case ;RoHS Compliant: Yes
BAV99LT1G
制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:DIODE, SWITCHING, 70V, SOT-23
BAV99LT1H
制造商:ON Semiconductor 功能描述:
BAV99LT3
功能描述:二极管 - 通用，功率，开关 70V 215mA Dual RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
BAV99LT3G
功能描述:二极管 - 通用，功率，开关 70V 215mA Dual RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
BAV99-MR
制造商:未知厂家 制造商全称:未知厂家 功能描述:DIODE BAV99 MINIREEL 500PCS
BAV99N1PT
制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere
BAV99N3
制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:High -Speed double diode